Strength and Structure of Ga(1-x)In(x)As Alloys.
Abstract
Substantial solid solution strengthening of Gallium arsenide by In acting as Indium arsenide units has recently been predicted for an intermediate temperature, plateau region. This strengthening could account, in part, for the reduction of dislocation density in GaAs single crystals grown from the melt. High temperature deformation measurements have been carried out on GaAs from 700 to 1100 C in the (123) orientation. In this single slip orientation, the critical resolved shear stress of the Indium-doped material is nearly twice that of the undoped material. Values of the critical resolved shear stress are weakly dependent on temperature, consistent with the solid solution hardening model. The observed increase in resistance to glide is sufficient to eliminate dislocations in large diameter crystals during growth. Electron microscopy is used to relate the mechanical properties of these materials to their dislocated structures.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 15, 1987
- Accession Number
- ADA181167
Entities
People
- John P. Hirth
- Katherine Faber
Organizations
- Ohio State University