III-V Heterojunction Structures and High Speed Devices.
Abstract
Much better p-GaAs/n-Si heterojunction has been obtained. This led to new experimental and theoretical studies of these diodes and progress has been made in the understanding of the electrical properties of the GaAs/Si interface. The study about dislocation reduction by annealing has been continued in connection with N. Otsuka from Purdue University. Interesting features has been revealed by TEM plan view made such as the creation of a clearly observable misfit dislocation network after annealing.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 24, 1987
- Accession Number
- ADA181179
Entities
People
- Hadis Morkoç
Organizations
- University of Illinois Urbana–Champaign