Numerical Simulation of the Permeable Base Transistor.

Abstract

This document describes the results of an SBIR Phase II program to investigate, through numerical simulation, the operational physics of the gallium arsenide permeable base transistor. Two distinct algorithms were used in the study: the semiconductor drift and diffusion equation algorithm and the moments of the Boltzmann transport equation algorithm. The results of the study show that one-micron feature size PBTs are capable of: a) cutoff frequencies in excess of 120 GHz, b) fmax values in the vicinity of 200 GHz, and c) breakdown voltages in excess of 17 volts. The study also demonstrates that the design of the PBT is compatible with hydrodynamic flow concepts, which suggest means to significantly reduce the capacitance of the PBT.

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Document Details

Document Type
Technical Report
Publication Date
May 04, 1987
Accession Number
ADA181182

Entities

People

  • B. Morrison
  • H. L. Grubin
  • J. P. Kreskovsky
  • M. Meyyanppan

Tags

Communities of Interest

  • Energy and Power Technologies
  • Space

DTIC Thesaurus Topics

  • Boltzmann Equation
  • Computational Fluid Dynamics
  • Computational Science
  • Differential Equations
  • Electron Density
  • Electrons
  • Energy Transfer
  • Equations
  • Field Effect Transistors
  • Fluid Dynamics
  • Fluid Flow
  • Gallium Arsenides
  • Materials
  • Metal-Semiconductor Junctions
  • Partial Differential Equations
  • Semiconductors
  • Transistors

Readers

  • Finite Element Method (FEM) for solving Partial Differential Equations (PDEs)
  • Semiconductor Device Technology
  • Software Engineering

Technology Areas

  • Microelectronics