Single Crystal Films of Semiconductors on Amorphous Substrates Via a Low Temperature Graphoepitaxy.

Abstract

The objective of this program is to carry out basic research on the phenomenon of surface-energy-driven secondary grain growth (SEDSGG) in thin films on amorphous and single crystal substrates. Means of enhancing grain boundary mobility, such as ion bombardment, doping, and rapid thermal annealing are investigated, Theoretical models for SEDSGG are developed. The role of surface patterning in SEDSGG is also studied.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1987
Accession Number
ADA181194

Entities

People

  • Carl V. Thompson
  • Henry I. Smith

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Crystals
  • Electron Microscopy
  • Electronics
  • Electronics Laboratories
  • Engineering
  • Epitaxial Growth
  • Films
  • Grain Size
  • Jet Propulsion
  • Low Temperature
  • Materials
  • Materials Science
  • Point Defects
  • Semiconductors
  • Solid State Physics
  • Thin Films

Readers

  • Materials Science and Engineering.
  • Nanofabrication and Microfabrication.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene