Gas Source MBE (Molecular Beam Epitaxy).

Abstract

The objective of the research supported by the grant to grow epitaxial III-V semiconductor films using gaseous source materials for molecular beam epitaxy (MBE). The grant provides the critical equipment items needed to customize an existing commercial MBE system and allow growth of heteroepitaxial structures that can not be fabricated by other existing techniques.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1987
Accession Number
ADA181214

Entities

People

  • Gary L. Robinson

Organizations

  • Colorado State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Colorado
  • Electrical Engineering
  • Engineering
  • Epitaxial Growth
  • Instrumentation
  • Materials
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Monitors
  • Scientific Research
  • Semiconductors
  • Universities
  • X Rays

Fields of Study

  • Materials science

Readers

  • Research Science/Academic Research
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics