Avalanching in Single-Event-Upset Charge Collection in Semiconductor Diodes.

Abstract

The one-dimensional computer program DIODE has been used to calculate charge collection in single ionizing events in silicon and gallium arsenide diodes. Avalanche multiplication is calculated to occur above a threshold of 3 V in a silicon diode, in agreement with published measurements. Since avalanching may lead to burnout in very-large-integration semiconductors, it is a greater danger than the funneling effect of space charge. Carrier recombination is found to be important in gallium arsenide. Keywords: Avalanche; Single-event upset; CHarge collection; Semiconductor; Silicon; Gallium arsenide; and Carrier recombination.

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1987
Accession Number
ADA181452

Entities

People

  • Alford L. Ward

Organizations

  • Harry Diamond Laboratories

Tags

Communities of Interest

  • Advanced Electronics
  • Weapons Technologies

DTIC Thesaurus Topics

  • Agreements
  • Computer Programs
  • Computers
  • Current Density
  • Electric Fields
  • Electronics
  • Gallium
  • Gallium Arsenides
  • Jet Propulsion
  • Measurement
  • P-N Junction Diodes
  • Schottky Diodes
  • Semiconductor Diodes
  • Semiconductors
  • Space Charge
  • Three Dimensional
  • Two Dimensional

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Space