Two-Dimensional Thermal Oxidation of Silicon. 1. Experiments,
Abstract
This paper introduces a unique experimental approach in which extensive data were obtained concerning the oxidation of cylindrical silicon structures of controlled radii of curvature. It is quantitatively demonstrated that the oxidation of curved silicon surfaces is retarded at low temperatures and sharp curvatures, and that the retardation is more severe on concave than convex structures. These observations will be interpreted using a physical model based on stress effects on oxide growth parameters. The paper begins with a brief review of two-dimensional oxidation phenomena. Experimental procedures are then described in detail. The experimental results as characterized by surface curvature, oxide growth rate and viscosity will provide useful design guidelines. A theoretical model is developed in a separate paper based on the premise that the viscous normal to the silicon surface is responsible for the retarded oxide growth and that the stress in the bulk of the oxide accounts for the difference between concave and convex structures.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1979
- Accession Number
- ADA181721
Entities
People
- D. B. Kao
- J. P. Mcvittie
- Krishna C. Saraswat
- W. D. Nix
Organizations
- Stanford University