EPR (Electron Paramagnetic Resonance) Studies of Defects and Impurities in Boron-Implanted Hg sub 1-x Cd sub x Te.
Abstract
Representative high-purity single crystals of Hg(1-x) Cd(x) Te have been examined by electron paramagnetic resonance (EPR) to determine whether they contain Fe+3 impurities or defects. EPR spectra consistent with substitutional Fe+3 impurities were obtained from some CdTe samples, but no paramagnetic centers have been observed in p-type Hg0.7Cd0.3Te. Since boron ion-implanation is commonly used to produce n-p junctions in HgCdTe during the fabrication of infrared sensor devices, paramagnetic damage centers are likely to form but have not been previously demonstrated. We report the observation of free-electron -like EPR signals in heavily 11B+ implanted CdTe and Hg0.7Cd0.3Te. These spectra have similar EPR characteristics to the so-called dangling-bond defects generated in ion-implanted Si and GaP. Although the identities of these defects in HgCdTe remain to be established, the effects of implant conditions and thermal treatments are briefly described. Keywords: Mercury cadmium tellurids, Ion implantation damage, Defects in semiconductors, Electron paramagnetic, Resonance.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 22, 1987
- Accession Number
- ADA182436
Entities
People
- E. L. Venturini
- Robert C. Bowman Jr.
Organizations
- The Aerospace Corporation