Studies of Boron Implantation through Photochemically Deposited SiO2 Films on Hg1-xCdxTe.

Abstract

Variable temperature Hall and resistivity measurements have been used to monitor the changes in carrier behavior in p-type Hg1-xCdxTe when boron ions are implanted through photochemically deposited SiO2. The formation of an n-type layer is demonstrated. Quantitative and non-destructive determination of the absolute 10B concentration and distribution have been obtained by the novel method of neutron depth profiling. As expected, the boron distributions in the SiO2 films and Hg1-xCdxTe are strongly dependent upon the ion implant energy. However, negligible changes in the boron depth profiles were found after 200 C anneals. The present results are briefly related to the performance behavior of mid-wavelength infrared (MWIR) sensors produced via generic ion implantation procedures. Keywords: Mercury cadmium tellurides, Ion implantation effects, Silicon dioxide, Passivation, Neutron depth profiling, Infrared materials, Analysis.

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Document Details

Document Type
Technical Report
Publication Date
May 22, 1987
Accession Number
ADA182437

Entities

People

  • John F. Knudsen
  • R. G. Downing
  • Robert C. Bowman Jr.
  • Ruby E. Robertson

Organizations

  • The Aerospace Corporation

Tags

Communities of Interest

  • Energy and Power Technologies
  • Space

DTIC Thesaurus Topics

  • Air Force
  • Charge Carriers
  • Charged Particles
  • Chemistry
  • Detection
  • Detectors
  • Electrical Properties
  • Electron Mobility
  • Electrons
  • Films
  • Implantation
  • Ion Implantation
  • Mass Spectrometry
  • Materials
  • Measurement
  • Particle Spectra
  • Spectra

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.