The Growth of Gallium Nitride Films Via the Innovative Technique of Atomic Layer Epitaxy.

Abstract

This contract involves investigating the efficacy of atomic layer an molecular beam epitaxy techniques for the growth of Gallium Nitride (a wide direct bandgap semiconductor). During this reporting period the Atomic Layer Epitaxy Molecular Beam Epitaxy apparatus was designed and will be ready for construction in mid-July. An interim rf discharge nitrogen source was designed, constructed and used for initial growth experiments. A microwave power supply and resonance cavity have been ordered because recently acquired information indicates this may produce more reactive nitrogen. Keywords: Gallium Nitride film, Atomic layer epitaxy, Semiconductors.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1987
Accession Number
ADA182705

Entities

People

  • Calvin H. Carter Jr.
  • Michael J. Paisley
  • Robert F Davis
  • Susan A. Mack

Organizations

  • North Carolina State University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Weapons Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Ceramic Materials
  • Chemical Vapor Deposition
  • Chemistry
  • Compound Semiconductors
  • Desorption
  • Detectors
  • Electron Energy
  • Electronics Laboratories
  • Electrons
  • Energy
  • Materials
  • Materials Science
  • Semiconductors
  • Silicon Carbide
  • Spectra
  • Spectroscopy

Fields of Study

  • Materials science

Readers

  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Semiconductor Device Technology
  • Technical Research and Report Writing.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene