Silicide/Si Interfaces in VLSI Structures.
Abstract
The objective of this program was to investigate Silicide Si interfaces using electron energy loss spectroscopy, electron micro-diffraction and electron induced x ray emission with fine-focussed electron beams. For silicide studies we used self-supporting lateral diffusion couples because thin samples are needed to minimize electron-beam and maximize spatial resolution. In Nickel silicide structures, high resolution measurements were made of composition, structure and interface width; the compositional width of the Nickel Silicide interface boundary is at most 10 nonometers. The successful application of these techniques allowed us to investigate other technologically important interfaces: amorphous alloys, Poly Silicon Silicon and Gallium/Arsenide Gallium/Indium/Arsenide interfaces. In the latter case, electron energy loss measurements using a scanning transmission electron microscope allowed identification of electronic states associated with a single misfit dislocation.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 15, 1987
- Accession Number
- ADA182718
Entities
People
- James W. Mayer
Organizations
- Cornell University