Electron-Phonon Interaction in GaAs/AlGaAs Structures.

Abstract

This report summarises investigations into phonon scattering mechanisms at surfaces. Fast heat pulse measurements have shown that the stretching of heat pulses, in transit between a generator and detector, occurs in a damaged region below the heater film. The scattering responsible is most probably due to strain fields put into the material by the action of mechanically polishing the surface. The observed propagation, in which high energy phonons exhibit diffusive propagation whilst the low energy phonons are ballistic, is one manifestation of quasi diffusion. This type of propagation will play an important role in the study of superlattice systems by phonon techniques. Keywords: Electron phonon interaction; Phonon scattering; Semiconductor structures.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1986
Accession Number
ADA182819

Entities

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  • M. N. Wybourne

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  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Abstracts
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  • Electrons
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  • Palladium
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  • Semiconductors

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  • Electrical Engineering
  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

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  • Microelectronics