Impedance and Admittance Measurements at Intercalated n-HfS2/Non-Aqueous Electrolyte Interface.

Abstract

Capacitance, impedance and admittance studies were performed on single crystal n-HfS2 before an after copper intercalation from acetonitrile based electrolyte. The n-HfS2/non-aqueous electrolyte interface was modelled by equivalent R-C circuits containing frequency dependent elements. Electrochemical intercalation by copper into n-HfS2 introduced Faradaic conductance effects. The composition of copper intercalated n-HfS2 in close proximity to the interfacial region was obtained assuming a diffusion coefficient for copper in n-HfS2 of 10 to the 8th sq. cm./sec. The photoanode demonstrated apparent degeneracy for > 0.1 miles of intercalated copper, suggesting tat progressive electronic population of the n-HfS2 conduction band was occurring. Capacitance values for intercalated n-HfS2 were of the order 10 to the 6thF/cm squared. Keywords: Hafnium disulfide, capacitance, impedance, admittance spectroscopy, copper intercalation.

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1987
Accession Number
ADA183250

Entities

People

  • Anthony F. Sammells
  • Krystyna W. Semkow
  • Nirupama U. Pujare

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Cells
  • Chemical Reactions
  • Chemistry
  • Coefficients
  • Crystals
  • Diffusion
  • Diffusion Coefficient
  • Electrochemical Energy Storage
  • Electrodes
  • Energy Bands
  • Equivalent Circuits
  • Materials
  • Military Research
  • Photoelectrochemical Cells
  • Single Crystals
  • Space Charge

Fields of Study

  • Materials science

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  • Electrochemical Surface Science
  • Electromagnetic Wave Scattering and Antenna Radiation Engineering
  • Nanocomposite Materials Science

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene