Phonon Shifts and Strains in Strain-Layered (Ga1-xInx)As.

Abstract

The phonon frequencies (Raman Technique) and the strains (X-ray rocking curve technique) in (Ga1-xInx) As films is measured on GaAs (100) substrates. Films with various x-values and various thicknesses were studied. The films range from perfect epitaxial ones to those that have relaxed by different amounts. Using both of these measurements, all of the films gives internal agreement, which indicates that the Raman technique can be used for in situ monitoring of the growth process. Keywords: Gallium Arsenides; Gallium Indium Arsenide.

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Document Details

Document Type
Technical Report
Publication Date
Jul 31, 1987
Accession Number
ADA183320

Entities

People

  • Chu-ryang Wie
  • Frank H. Dacol
  • G. D. Petit
  • Gerald Burns
  • J. M. Woodall

Organizations

  • University at Buffalo

Tags

Communities of Interest

  • Air Platforms
  • Energy and Power Technologies
  • Weapons Technologies

DTIC Thesaurus Topics

  • Chemical Compounds
  • Chemistry
  • Civil Engineering
  • Compound Semiconductors
  • Crystal Lattices
  • Engineering
  • Frequency
  • Frequency Shift
  • Materials
  • Military Research
  • New York
  • Phonons
  • Physics
  • Raman Spectroscopy
  • Semiconductors
  • Thickness
  • X Rays

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene