Investigations at the n-HfS2/Non-Aqueous Electrolyte Interfacial Region.
Abstract
Single crystal n-Hafnium disulfide photoelectrodes prepared by halogen vapor transport were investigated in 0.1M TBAPF 6/Acetonitrile electrolyte using both impedance and admittance spectroscopy techniques. The presence of frequency dependent capacitive and resistive elements in the equivalent circuit for n-Hfs2/electrolyte interface were evident. Measured capacitance effects at the interfacial region were found dependent upon the crystal orientation used, with that for defect free van der Waals surfaces being 10 to the 8th power/sq. cm.; and order of magnitude lower than for n-HfS2 intercalation layers exposed to the electrolyte. High capacitance values were correlated with a high population of surface charges. Admittance spectroscopy analysis suggested the presence of surface states associated with surface adsorption processes. Open-circuit photovoltages up to 0.35V under 100mW/sq. cm illumination were observed for van der Waals surfaces, decreasing to 0.16V as the population intercalating layers exposed to the electrolyte was increased.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1987
- Accession Number
- ADA183343
Entities
People
- Anthony F. Sammells
- Krystyna W. Semkow
- Nirupama U. Pujare