Electron Irradiation Effects on the Shunt Resistance of Silicon Solar Cells.

Abstract

Shunt resistance Rsh values greater than 5 X 10 to the 6th power ohms have been measured for high efficiency silicon solar cells fabircated by a low temperature diffusion technique, whereas lower values ((0.5-.0)x100,000ohms) were obtained for ion-implanted solar cells. A degradation in Rsh values by an order of magnitude was observed after electron irradiations of 1 MeV to a fluence of 1 X 10th to the 16th power e-per sq. cm. Temperature dependence studies indicated a rapid decrease in Rsh above a threshold temperature which is sensitive to the device quality. As the fluence of irradiation increased, very little shift in the threshold temperature towards lower values was observed. The degradation in Rsh causes an enhancement in the dark saturation current which is partly responsible for degradation in the open-circuit voltage of the devices.

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Document Details

Document Type
Technical Report
Publication Date
Jul 31, 1987
Accession Number
ADA183378

Entities

People

  • Sonali Banderjee
  • Wayne A. Anderson

Organizations

  • University at Buffalo

Tags

Communities of Interest

  • Advanced Electronics
  • Weapons Technologies

DTIC Thesaurus Topics

  • Cells
  • Chemistry
  • Civil Engineering
  • Degradation
  • Diffusion
  • Electron Irradiation
  • Electrons
  • Emission
  • Energy Levels
  • Engineering
  • Ion Implantation
  • Low Temperature
  • Materials
  • Military Research
  • New York
  • Solar Cells
  • State Governments

Readers

  • Electrical Engineering
  • Nuclear and Radiation Engineering.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics