Study and Development Effort on Opposed Gate-Source GaAs Devices

Abstract

This document describes research on the Opposed Gate-Source Transistor (OGST) for the millimeter wave regime. Progress described concerns the development of self aligned lithography processes for fabricating a source contact opposite the gate electrode on a 200 nm GaAs membrane, the processing an ohmic source contact, the fabrication of a Schottky gate contact compatible with the high temperature processing of the source contact, and the electrical characterization of the transistors. Keywords: Communications, Monolithic arrays, Millimeter waves, Surveillance, Opposed gate-source transistors.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1987
Accession Number
ADA183433

Entities

People

  • A. Yarborough
  • G. C. Dalman
  • H. Kondoh
  • J. Bellantoni
  • Lee K. Rauschenbach

Organizations

  • Cornell University College of Engineering

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Synthesis
  • Chemistry
  • Computer Programs
  • Computers
  • Construction
  • Fabrication
  • Field Effect Transistors
  • Manufacturing
  • Measurement
  • Metal-Semiconductor Junctions
  • Photolithography
  • Printing
  • Semiconductor Devices
  • Semiconductors
  • Solid State Electronics
  • Transmission Lines
  • X Rays

Fields of Study

  • Engineering
  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • 5G
  • 5G - Internet of Things