Laser Induced Chemical Vapor Deposition of Gallium Arsenide Films.

Abstract

The objective of this project is to investigate the epitaxial growth of device quality III-V semiconductor films by the free electron laser-induced epitaxial growth technique at low temperatures. Major efforts have been directed to (1) the design and construction of a low pressure reaction chamber and control system, and (2) the laser induced deposition and characterization of epitaxial gallium aresenide films by computer controlled MOCVD. Gallium arsenide films have been deposited by the ArF laser-induced MOCVD over a wide range of process parameters. Device quality homoepitaxial GaAs films with specular mirror smooth surface have been obtained in the substrate temperature range of 425-500 C. Keywords: Excimer laser, Laser induced, Epitaxial growth, Doping concentration, Mobility, Gallium arsenides.

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Document Details

Document Type
Technical Report
Publication Date
Aug 20, 1987
Accession Number
ADA183912

Entities

People

  • Shirley S. Chu
  • Ting L. Chu

Organizations

  • Southern Methodist University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Chemistry
  • Compound Semiconductors
  • Crystals
  • Electrical Engineering
  • Electron Mobility
  • Electronics Industry
  • Electronics Laboratories
  • Epitaxial Growth
  • Field Effect Transistors
  • Free Electron Lasers
  • Free Electrons
  • Modules (Electronics)
  • Optical Materials
  • Quantum Wells
  • Semiconductor Devices
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Pulsed Power and Plasma Physics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Graphene