Dual-Gate FET (Field Effect Transistor) Amplifier Switch. Task 1.

Abstract

A gallium-arsenide dual-gate field effect transistor amplifier-switch was designed and fabricated to provide an improved means for generating a high-speed microwave pulse from a CW source to simulate an actual radar pulse. Fast rise and fall time capabilities was demonstrated by the FET amplifier-switches which provided an on-off ratio of more than 50-dB. Descriptions of the FET amplifier-switches are provided along with specific test results over the 7 to 11 GHz frequency range.

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Document Details

Document Type
Technical Report
Publication Date
Feb 15, 1987
Accession Number
ADA183924

Entities

People

  • Daniel D. Mawhinney

Organizations

  • Sarnoff Corporation

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Amplifiers
  • Analyzers
  • Circuit Boards
  • Detectors
  • Electronics Laboratories
  • Field Effect Transistors
  • Gallium Arsenides
  • Microwaves
  • Military Research
  • Pin Diodes
  • Printed Circuits
  • Radar Pulses
  • Radar Transmitters
  • Radio Frequency Pulses
  • Simulations
  • Spectrum Analyzers
  • Transistors

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Optical Physics and Photonics.

Technology Areas

  • Microelectronics