Schottky Barrier Photoelectrodes with a Variable Barrier Height.
Abstract
This program has dealt with characterizing junctions formed between semiconductors and 'insertion compounds'. Examples of the latter are HxWO3 and HxIrO2, which have a variable work function according to the stoichiometry parameter, x. Specific applications of the structures to optically activated light modulators and to chemical sensors have been demonstrated.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1987
- Accession Number
- ADA183965
Entities
People
- M. M. Carrabba
- R. D. Rauh
- Stephen N. Benoit
- Thomas J. Lewis
- Timothy L. Rose