Excimer Laser-Assisted Deposition of GaAs, AlAs, and (Al,Ga)as from Lewis Acid-Base Adducts.
Abstract
Laser-assisted deposition of GaAs, AL,As and (AL,Ga)As thin films on Ge<100> substrates from trimethylgallium-trimethylarsenic and trimethylaluminum-trimethylarsenic Lewis acid-base adduct source materials is reported. A parametric study has been performed in which reactive gas pressure, substrate temperature, laser fluence, laser wavelength (248 nm or 193 nm), and orientation of the laser beam with respect to the substrate have been varied. In the case of irradiation parallel to the substrate, stoichiometric films of GaAs and (AL,Ga)As have been obtained. The data suggest that for irradiation perpendicular to the substrate a competition exists between desorption and photodeposition, which adversely affects film stoichiometry under the conditions studied.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 12, 1987
- Accession Number
- ADA184588
Entities
People
- G. L. Olson
- J. E. Jensen
- J. J. Zinck
- L. W. Tutt
- P. D. Brewer