Fundamental Studies in the OM-CVD Growth of Ga-In-As-Sb.

Abstract

We have studied the fundamental OM-CVD growth processes. Several ternary and quaternary alloys have been synthesized and their structural, optical and electrical properties were studied. We have developed Atomic Layer Epitaxy to control the deposition process to the atomic level. Strained layer superlattices have been used as buffer layers to reduce defects originating from GaAs substrates.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1987
Accession Number
ADA184822

Entities

People

  • J. R. Hauser
  • S. M. Bedair

Organizations

  • North Carolina State University

Tags

Communities of Interest

  • Advanced Electronics
  • Space

DTIC Thesaurus Topics

  • Atomic Layer Epitaxy
  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Crystal Growth
  • Crystals
  • Detectors
  • Diffraction
  • Electrical Properties
  • Electron Mobility
  • Electronics Laboratories
  • Epitaxial Growth
  • Light Emitting Diodes
  • Measurement
  • Military Research
  • Optoelectronic Devices
  • Semiconductors
  • Silicon Carbide

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology