Alternatives to Arsine: The Atmospheric Pressure Organometallic Chemical Vapor Deposition Growth of GaAs Using Triethylarsenic.
Abstract
Studies on the homoepitaxial growth of unintentionally doped GaAs by atmospheric pressure organometallic chemical vapor deposition using triethylarsenic and trimethylgallium have been carried out, and the effects of growth temperature, V/III ratio, and flow rate on film characteristics are reported. Mirror-like epitaxial layers of n-type GaAs were obtained at substrate temperatures of 540-650 C and at V/III ratios of 6.7-11. The carrier concentrations for these films were approximately 10 to the 16th - 10 to the 17th CC, and from secondary ion mass spectroscopic analysis, the predominant epilayer impurities were determined to be both carbon and silicon.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 15, 1987
- Accession Number
- ADA184976
Entities
People
- Donna M. Speckman
- Jerry P. Wendt
Organizations
- The Aerospace Corporation