Resonant Level Lifetime in GaAs/AlGaAs Double-Barrier Structures.

Abstract

The lifetime of the lowest quasi-bound state localized between the barriers of a GaAs/AlGaAs double-barrier structure is calculated as a function of barrier and well dimensions. The results are consistent with high-frequency experiments. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1987
Accession Number
ADA185376

Entities

People

  • Clyde A. Morrison
  • John D. Bruno
  • Thomas B. Bahder

Organizations

  • Harry Diamond Laboratories

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Acquisition
  • Classification
  • Combat Surveillance
  • Electrons
  • Energy
  • Equations
  • Frequency
  • Military Research
  • New York
  • Numbers
  • Observation
  • Quantum Tunneling
  • Quantum Wells
  • Security
  • Semiconductors
  • Tunneling
  • Universities

Fields of Study

  • Materials science

Readers

  • Atmospheric Science / Meteorology, specifically Wind Wave Turbulence.
  • Optical Physics and Photonics.
  • Quantum Chemistry