Molecular Beam Epitaxial Growth and Characterization of III-V Compound Semiconductor Single and Multiple Interface Structures.

Abstract

A brief description of equipment acquired under the present grant is provided, along with a list of equipment. The equipment has enhanced molecular beam epitaxial growth and characterization capabilities in the principal investigator's laboratory.

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Document Details

Document Type
Technical Report
Publication Date
Oct 29, 1986
Accession Number
ADA185400

Entities

People

  • A. Madhukar

Organizations

  • University of Southern California

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Abstracts
  • Acquisition
  • Compound Semiconductors
  • Detection
  • Electron Microscopy
  • Electronics
  • Electronics Industry
  • Electronics Laboratories
  • Epitaxial Growth
  • High Vacuum
  • Measurement
  • Measuring Instruments
  • Microscopes
  • Molecular Beams
  • Power Supplies
  • Semiconductors
  • Vacuum

Fields of Study

  • Physics

Readers

  • Aerospace Test and Evaluation
  • Technical Research and Report Writing.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics