Some Investigations of Molecular Beam Epitaxial Growth of III-V Semiconductor Films via Monte-Carlo Computer Simulations, Carrier Tunnelling and Spectroscopic Ellipsometry.
Abstract
From time of the inception of this work, it became clear at a relatively early stage that the USC MBE facility required major effort and investment to be able to grow reliable samples. In an effort to achieve this aim, the principal investigator was forced to take responsibility of the MBE growth as well - a situation not originally anticipated. Accordingly, major effort was spent making the USC MBE machine operational and putting in place basic support facilities (such as substrate cleaning and preparation). The situation with regard to the MBE machine thus, unfortunately, deprived us of appropriate GaAs/A1 Ga1-xAs samples to be able to proceed with certain experiments. We did, however, grow a few GaAs/A1x Ga1-xAs/GaAs tunnelling structures had them fabricated into actual tunnel structures, and carried ou Fowler-Norheim resonance tunnelling experiments at JPL. The results indicated that the interfacial quality of these structures were rather poor.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 05, 1987
- Accession Number
- ADA185520
Entities
People
- A. Madhukar
Organizations
- University of Southern California