Radiant Power Degradation of Silicon-Doped Gallium Arsenide and Gallium Aluminum Arsenide Infrared Light-Emitting Diodes.

Abstract

This work investigates the use of the capacitance-voltage (C-V), current -voltage (I-V), and radiant power-current-voltage (P-I-V) diode characteristics as a means of modeling the general radiant power degradation of silicon-doped gallium arsenide and gallium aluminum arsenide (GaAs:Si, GaA1As:Si) IREDs. The procedure consists of measuring the initial characteristics, stressing with various operating current densities at room temperature, then periodically repeating the measurements. Control diodes that are not stressed are tested to determine the precision of the measuring apparatus and the normal variations in diode behavior.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1987
Accession Number
ADA186726

Entities

People

  • William N. Resimont

Organizations

  • Air Force Institute of Technology

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Arkansas
  • Current Density
  • Degradation
  • Efficiency
  • Electron Holes
  • Energy Bands
  • Energy Gaps
  • Gallium Arsenides
  • Heat Sinks
  • Light Emitting Diodes
  • Materials
  • Measurement
  • Personal Computers
  • Quantum Efficiency
  • Semiconductors
  • Thermal Resistance

Fields of Study

  • Engineering
  • Materials science

Readers

  • Semiconductor Device Technology
  • Spectroscopy.

Technology Areas

  • Microelectronics