Ion Implanted GaAs I.C. Process Technology

Abstract

This report presents the first quarter results of a program designed to develop a planar process technology for GaAs integrated circuits. Planar structures will be achieved by ion implantation into localized areas of semi- insulating substrates to form device areas with proper electrical characteristics. Caltech, Cornell University, and Crystal Specialties, Inc. are subcontractors in this program. In bulk crystal growth, progress in eliminating causes of boat wetting has led to a more stable substrate fabrication process with 65% yield. Keywords: Semi-insulating GaAs; Ion implantation, IC, and Integrated circuits.

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Document Details

Document Type
Technical Report
Publication Date
Oct 20, 1977
Accession Number
ADA186764

Entities

People

  • B. Welch
  • F. Eisen
  • J. Kruger
  • R. Eden
  • R. Zucca

Tags

DTIC Thesaurus Topics

  • Ceramic Materials
  • Computer Programs
  • Computers
  • Crystal Growth
  • Crystal Lattices
  • Electron Mobility
  • Fabrication
  • Field Effect Transistors
  • Integrated Circuits
  • Ion Implantation
  • Large Scale Integration
  • Materials
  • Materials Science
  • Metal-Semiconductor Junctions
  • Operating Systems
  • Semiconductor Manufacturing
  • Semiconductors

Readers

  • Research Science/Academic Research
  • Semiconductor Device Technology
  • Software Engineering

Technology Areas

  • Microelectronics