A Report on the Effects of Neutron Irradiation of GaAs Semiconductors.

Abstract

The effects of neutron irradiation in GaAs MMICs and small signal FETs were investigated. Carrier concentration and mobility were measured as a function of fluence, doping, and channel depth. The individual components of the MMICs were also measured. Device degradation was determined to be the result of a combination of decreases in carrier concentration and mobility in the FETs. Radiation hardness levels based on 20% degradation in gain and drain current were determined. Keywords include: GaAs MMICs, Carrier concentration, Mobility.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1987
Accession Number
ADA186816

Entities

People

  • John K. Callahan

Organizations

  • Naval Postgraduate School

Tags

Communities of Interest

  • Advanced Electronics
  • Biomedical
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Structures
  • Crystal Lattices
  • Crystal Structure
  • Electronics Laboratories
  • Electrons
  • Field Effect Transistors
  • High Temperature
  • Integrated Circuits
  • Military Research
  • Modules (Electronics)
  • Neutron Bombardment
  • Point Defects
  • Radiation
  • Radiation Effects
  • Semiconductor Devices
  • Semiconductors
  • United States Naval Academy

Fields of Study

  • Materials science

Readers

  • Electronics Engineering
  • Solar Physics
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics