Superlattice Photodetectors.
Abstract
The technical progress in Phase 1 of this two-phase program aimed at developed of low noise, high sensitivity superlattice avalanche photodiodes is reported. The initial focus of the Phase 1 effort was development of metalorganic chemical vapor deposition (MOCVD) technology for the growth of high quality GaAs/A1GaAs superlattice structures. Using the developed growth technology, two series of GaAs/A1GaAs structures were evaluated with regard to dark current, breakdown voltage, and dark and illuminated gain characteristics to study effects of variations in critical growth and structural parameters. The results will be used to guide development of a predictive performance model for this class of devices during Phase 2 of the program. The model will then be applied to optimizing design of low noise, high sensitivity InGaAs/InP APD's operating in the low loss 1.0 to 1.6 micrometers wavelength range. Such devices will be grown by MOCVD and their performance evaluated during Phase 2 of the program.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1987
- Accession Number
- ADA186956
Entities
People
- Stanley W. Zehr