Nanoelectronics.
Abstract
Results of theoretical and experimental research on resonant tunneling diodes are reported. Of particular interest were the effects of restriction of the lateral dimensions of the device to achieve quantum confinement of electrons in all three dimensions. The theoretical efforts within this program were devoted to applying a quantum-transport approach to understanding the behavior of the resonant-tunneling diode. When this program began, there had been no demonstration of total spatial quantization in a fabricated semiconductor system. We pioneered work in this field by investigating the photoluminescence of laterally confined multiple quantum wells, known as 'quantum dots'. The results gave the first evidence for spatial quantization in a fabricated system and have stimulated considerable activity in the creation of microfabricated quantum structures. We undertook an extensive study of resonant tunneling in GaAs structures as a baseline approach. We investigated excited state resonant tunneling and were the first to show clear negative differential resistance because of resonant tunneling through excited states. We fabricated and electrically characterized quantum dot resonant tunneling structures. Effort was also expended on fabrication and characterization of silicon tunneling structures.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 14, 1987
- Accession Number
- ADA186969
Entities
People
- M. A. Reed
- R. T. Bate
- W. R. Frensley
Organizations
- Texas Instruments