Microwave Semiconductor Research-Materials, Devices and Circuits.
Abstract
This program covers the growth and assessment of gallium arsenide and related compounds and alloys for use in microwave, millimeter wave, and optical devices. It also covers the processing of the material into devices, the testing of the devices, and the theoretical modeling of carrier transport in these devices. Both molecular beam epitaxy (MBE) and organometallic vapor phase epitaxy (OMVPE) are used for growth. The following specific tasks are pursued: Develop an improved understanding of the role of the substrate and growth parameters on the quality of device structures on GaAs and related materials grown by OMVPE, Investigate the frequency and power limits of power FET devices employing a two-dimensional electron gas in the channel, Investigate and improve heterojunction structures for transistor applications, Produce semiconductor light emitters capable of high speed amplitude modulation, Femtosecond optical investigation of hot carrier dynamics in III-V compounds and quantum wells. Develop high speed receivers for optical communication using optical field effect transistors and large area epitaxial photoconductive detectors, Use optical excitation to study carrier dynamics in compound semiconductors, Develop advanced design techniques for microwave GaAs FET amplifiers, Improve direct method of broad band circuit design, and Explore transient carrier transport in small III-V devices in boundary limited domain.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1987
- Accession Number
- ADA187121
Entities
People
- D. W. Woodard
- G. W. Wicks
- J. R. Shealy
- L. F. Eastman
- S. Mukherjee
Organizations
- Cornell University College of Engineering