Autonomous Liquid Encapsulated Czochralski (LEC) Growth of Single Crystal GaAs by 'Intelligent' Digital Control

Abstract

Virtually total automation of the high-pressure LEC process for GaAs growth could be achieved with an intelligent growth control approach which combines deterministic and heuristic techniques. A number of 4 kg, 3 inch semi- insulating GaAs crystals have been grown reproducibly on an adapted Cambridge Instruments CI 358 puller without any significant operator intervention; even complex process steps like seeding and tail-off could be successfully handled by the system on its own. Process yields of more than 75 percent single crystals could be accomplished. Crystals grown with the digital system were superior in uniformity and diameter control, compared to conventionally grown crystals. Keywords: Crystal growth, Artificial intelligence, Automation.

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Document Details

Document Type
Technical Report
Publication Date
Aug 19, 1987
Accession Number
ADA187211

Entities

People

  • G. H. Schwuttke
  • Karl Reidling

Organizations

  • Arizona State University

Tags

Communities of Interest

  • Advanced Electronics
  • Autonomy
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Analog Systems
  • Artificial Intelligence
  • Automation
  • Cellular Structures
  • Compound Semiconductors
  • Computers
  • Control Systems
  • Crystal Structure
  • Crystals
  • Electrical Properties
  • Gallium Arsenides
  • High Pressure
  • Materials
  • Operating Systems
  • Semiconductors
  • Single Crystals
  • Universities

Readers

  • Robotics and Automation.
  • Semiconductor Device Technology

Technology Areas

  • AI & ML
  • AI & ML - Autonomous Systems
  • AI & ML - Bayesian Inference
  • AI & ML - DoD AI Strategy
  • Microelectronics
  • Microelectronics - Microelectromechanical Systems