Theoretical Studies of the Interface Electronic Properties of Tetrahedrally Coordinated Semiconductors.
Abstract
The work covers the following subject areas; (i) Electronic Structure of Superlattices; (ii) Electronic transport, magnetotransport, and magneto optical properties of quasi two dimensionally (2D) confined single particle states and charge carriers; (iii) Collective properties of 2D electrons and holes; (iv) Point Defect Inducted Deep levels in bulk compound semiconductors and superlattices; (v) The nature of Si/SiO2 system and the role of interface disorder; (vi) Semiconductor/ Metal Systems, including the Si/Silicide interface; (vii) Spectroscopic Ellipsometry Studies; (viii) Nitridation Kinetics of SiO2 on Si(100); (ix) Computer Simulations of molecular beam epitaxial growth of compound semiconductors and the atomistic nature of interfaces. Keywords: Electronic structure of superlattices, Transport, Magneto-transport and Magneto optical properties, Deep levels, The Si/SiO2 Interface, Silicon; Silicide interfaces.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 29, 1987
- Accession Number
- ADA187216
Entities
People
- A. Madhukar
Organizations
- University of Southern California