MBE (Molecular Beam Epitaxial) Growth Characterization and Electronic Device Processing of HgCdTe, HgZnTe, Related Heterojunctions and HgCdTe-CdTe Superlattices.

Abstract

As the MBE growth technique has continued to improve for Hg(1-x)Cd(x)Te films, the prospects for films of larger area have begun to be explored. These larger area films are important for imaging arrays and will be especially vital in the future for the efficient production of Hg(1-x)Cd(x)Te material. The growth of MBE of uniform Hg(1-x)Cd(x)Te epilayer on a large substrate is very difficult to achieve because of the non-uniform distribution of the fluxes and on the non-uniform temperature of the substrate. Keywords: Molecular Beam Epitaxial(MBE); Mercury; Cadmium; Tellurium.

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Document Details

Document Type
Technical Report
Publication Date
Jun 15, 1987
Accession Number
ADA187416

Entities

People

  • Jean-pierre Faurie

Organizations

  • University of Chicago

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Coefficients
  • Condensation
  • Electrical Properties
  • Energy Bands
  • Illinois
  • Materials
  • Measurement
  • Mobility
  • Molecular Beams
  • Orientation (Direction)
  • Spectra
  • Superlattices
  • Thickness
  • Transition Temperature
  • Universities
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene