High Pressure Electronic Transport in Semiconductors.

Abstract

Research has resulted in (1) developing galvanomagnetic measurements in the diamond anvil and/or sapphire anvil cells to pressure of about 10 gPa, (2) Performing electrical resistivity, magnetoresistance, Hall effect, and Shubnikov-de Haas measurements on bulk samples of GaAs and InP, and (3) Carrying out I-V and C-V measurements on Schottky diodes of GaAs and InP and MIS Structures. Keywords include: Semiconductors, Electronic transport, High pressure electronic transport, Electrical resistivity, and Photoluminescence.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1987
Accession Number
ADA187428

Entities

People

  • Ian L. Spain
  • James R. Sites.

Organizations

  • Colorado State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Construction Materials
  • Energy Bands
  • Hall Effect
  • High Pressure
  • Low Temperature
  • Measurement
  • Military Research
  • Optical Properties
  • Pressure Measurement
  • Quantum Wells
  • Scattering
  • Security
  • Semiconductors
  • Transitions
  • Transport Ships
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Mechanical Engineering/Mechanics of Materials.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics