A Viscoelastic BEM (Boundary Element Method) for Modeling Oxidation,
Abstract
A viscoelastic boundary element has been developed to model the motion of silicon dioxide and silicon nitride during thermal oxidation of silicon. This technique uses Kelvin's solution reformulated according to the correspondence principle on viscoelasticity. Constant velocity loading is chosen to ensure smooth variations in displacement and stress behavior for a wide range of relaxation times.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1987
- Accession Number
- ADA187490
Entities
People
- Dimitri A Antoniadis
- Jerome Connor
- Thye-lai Tung
Organizations
- Massachusetts Institute of Technology