Spontaneous Decay and Atomic Fluorescence Near a Metal Surface of an Absorbing Dielectric.
Abstract
Optical properties of an atom in the vicinity of a metal or dielectric are different from those in free space. The spontaneous decay of an atom with two degenerate levels is studied, where the relaxation operator is obtained as a function of the atom-surface separation and the complex bulk dielectric constant epsilon(omega). The Einstein coefficient A(m)(e) of an excited state jeme> appears to depend on the magnetic quantum number me. A sum rule for A(m)(e) is derived, and from the rotational symmetry with respect to the surface normal it is found that A(m)(e) = A(-m)(e). A general expression for the fluorescent radiation field in the far zone is then derived, which incorporates the polarization properties of the fluorescence, as they are modified by the presence of the dielectric. It is shown that the angular distribution of the emitted intensity depends strongly on epsilon(omega), and it is pointed out how information about the substrate, e.g., epsilon(omega), can be extracted from the temporal statistical behavior of the emitted photons. It is emphasized that the major surface effects are purely geometrical, despite the essential quantum nature of the problem. Keywords: Spontaneous decay, Atomic fluorescence, Atom near metal surface, Absorbing dielectric, Einstein coefficient, Magnetic quantum number.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1987
- Accession Number
- ADA187508
Entities
People
- Henk F. Arnoldus
- Thomas F. George
Organizations
- University at Buffalo