Microscopic Control of Metallization Stability.
Abstract
Metallization stability on semiconductor surfaces depends on atomic interdiffusion at two interfaces, namely the semiconductor metal junction and the overlayer atmosphere interface. Recent progress in controlling the stability of these interfaces derived from the use of powerful nondestructive analytical tools of local interface composition. We summarize here synchrotron radiation photoemission studies of metallic overlayers on Si(111) and GaAs(110) surfaces. We focus on the use of diffusion barriers to control atomic interdiffusion, and on the effect of oxidizing atmospheres on metal and semiconductor composition.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 23, 1987
- Accession Number
- ADA187553
Entities
People
- A. Franciosi
- A. Wall
- C. Caprile
- P. Philip
- Shi Chang
Organizations
- University of Minnesota