Development of VLSI Optical Data Link.
Abstract
The deposition of GaAs epilayers onto the silicon epilayer of an SOS wafer has proven to be a relatively robust process, insensitive to variations in substrate orientation, cleaning, preconditioning, growth rate and temperature, and composition of the deposited layer. Deposition onto sapphire substrates has not yet given GaAs epilayers of high quality. The best approach for obtaining device-quality GaAs appears to be through utilization of the silicon epilayer as the base for the GaAs deposition. Experiments will be carried out to improve the quality of GaAs layers deposited directly onto sapphire. Keywords: Heteroepitaxy; Epitaxial crystal growth; Crystal growth; Gallium arsenide; Silicon; Silicon on Sapphire; VLSI; VHSIC; Optoelectronic; Electrooptical; Fiber optics.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 16, 1987
- Accession Number
- ADA187883
Entities
People
- P. G. Mcmullin
- R. L. Messham