Development of VLSI Optical Data Link.
Abstract
This report covers a sequence of epitaxial growth runs on sapphire substrates. The gallium arsenide films resulting do not have as good a surface morphology as the films previously grown on silicon-on-sapphire substrates. However, the films are highly oriented with respect to the substrate and controllable to obtain 111 or 100 orientation. Further optimization of deposition on sapphire substrates will be continued while the main thrust of the program will be directed to the formation of devices fabricated in gallium arsenide layers deposited onto the silicon epilayer of SOS substrates for evaluation purposes. Keywords include: Heteroepitaxy; Epitaxial crystal growth; Crystal growth; Gallium arsenide; Silicon; Silicon on Sapphire; VLSI; VHSIC; Optoelectronic; Electrooptical; and Fiber optics.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1987
- Accession Number
- ADA187884
Entities
People
- P. G. Mcmullin
- R. L. Messham