Ytterbium Monolayer Diffusion Barriers at Hg(1-x)CD(x)Te/Al Junctions.

Abstract

Single layers of Yb at the Hg1-xCdxTe(110)/A1 interface prevent A1-Te reaction and dramatically increase the Hg concentration at the interface. The interlayer-induced change in atomic interdiffusion results in an increase of over two orders of magnitude in the Hg/Te ratio in the junction region. Semi-empirical calculations of thermodynamic parameters following Miedema's model suggest that other rare earths should also act as effective diffusion barriers at Hg2-XCdXTe/reactive metal junctions. Keywords: Interface reactivity, Diffusion barriers, Metal semiconductor interfaces, Mercury compounds, Cadmium tellurides.

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Document Details

Document Type
Technical Report
Publication Date
Oct 23, 1987
Accession Number
ADA188013

Entities

People

  • A. Franciosi
  • A. Raisanen
  • A. Wall
  • P. Philip
  • Shi Chang

Organizations

  • University of Minnesota

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Engineering
  • Electronics
  • Elements
  • Emission
  • Energy
  • Energy Bands
  • High Resolution
  • Materials
  • Materials Science
  • Metals
  • Monomolecular Films
  • Radiation
  • Rare Earth Elements
  • Semiconductors
  • Synchrotron Radiation
  • Tellurides
  • Ytterbium

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene