Computer Aided Design of Integrated Circuit Fabrication Processes for VLSI Devices

Abstract

Continuing work on thermal oxidation of silicon (at pressures to 20 atm) is discussed along with work on ion implantation (Boltzman transport modeling, range statistics, and record mechanisms). CVD and silicide technology, interface physics, and the continuing development of the STANFORD SUPREM process modeling program. Keywords include: I.C. processing, Process simulation, Oxidation, Silicides, Ion implantation, and Chemical vapor deposition.

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1981
Accession Number
ADA188032

Entities

People

  • J. D. Meindl
  • J. D. Plummer
  • James F. Gibbons
  • R. Dutton

Organizations

  • Stanford University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Charge Carriers
  • Charge Density
  • Chemical Vapor Deposition
  • Crystal Structure
  • Electrical Engineering
  • Electromagnetic Radiation
  • Electronics Laboratories
  • Fabrication
  • Grain Growth
  • Grain Size
  • Heat Of Activation
  • High Pressure
  • Integrated Circuits
  • Materials
  • Measurement
  • Semiconductor Devices
  • Semiconductors

Readers

  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology
  • Surface Engineering/Surface Coating Technology.