Plasma Deposition of Silicon Carbide Thin Films.
Abstract
This report summarizes the work performed on a three year program to obtain an understanding of deposition processes of thin films from plasmas. Deposition plasmas of methane and of methane-hydrogen and methane-silane mixtures were characterized via electrical, optical, and mass spectroscopic measurements. Surface chemical studies of the fundamental surface reactions were performed, and a model was constructed which takes into account both gas phase and the surface processes leading to deposition. The properties of the deposited films were related to the plasma conditions associated with their deposition. Advances in process modeling and surface chemical techniques were achieved on this program, in addition to the knowledge that was gained about the specific plasma deposition processes that were studied.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 20, 1987
- Accession Number
- ADA188093
Entities
People
- John Yates
- L. E. Kline
- Michael J. Bozack
- W. D. Partlow
- W. J. Choyke