Study of Quantum Mechanical Effects in Deep Submicron, Grating-Gate Field Effect Transistors.

Abstract

This research program investigates the effect of extreme submicron spatial modulation of the electrostatic potential on the transport in a two-dimensional electron gas (2DEG) in silicon and in III-V compound semiconductor devices. The test vehicle is the so-called grating-gate FET (GGFET). When made to move in a direction perpendicular to the grating gate, electrons experience a surface superlattice (SSL) effect. When moving along the potential modulation electrons are restricted to only one degree of freedom, and thus constitute a quasi-one-dimensional (Q1D) system. Our major achievements in the past year include: In silicon we have fabricated, with high yield, grating gate transistors and measured their current voltage characteristics at liquid helium temperatures. The device mobility at 4 K is about 15000 sq cm/Vs, possibly the highest reported for MOSFETs fabricated using e-beam or x-ray lithographies. Keywords: Surface superlattice, X ray lithography, Deep UV lithography.

Document Details

• Document Type: Technical Report
• Publication Date: Oct 29, 1987
• Accession Number: ADA188283

Entities

People

• Dimitri A Antoniadis
• Henry I. Smith

Organizations

• Massachusetts Institute of Technology

Tags

Communities of Interest

• Advanced Electronics

DTIC Thesaurus Topics

• Compound Semiconductors
• Electron Density
• Electron Mobility
• Electrons
• Fabrication
• Field Effect Transistors
• High Electron Mobility Transistors
• Lithography
• Materials
• Metal-Semiconductor Junctions
• Photolithography
• Semiconductor Devices
• Semiconductors
• Transistors
• Two Dimensional
• X Ray Lithography
• X Rays

Fields of Study

• Materials science
• Physics

Readers

• Nanofabrication and Microfabrication.
• Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
• Semiconductor Device Technology

Technology Areas

• Microelectronics
• Quantum Computing