Preparation and Characterization of Thin Films of Alumina by Metalorganic Chemical Vapor Deposition.

Abstract

A simple novel horizontal reactor was used to prepare 2000 angstrom films of alumina on silicon substrates by the thermal decomposition of aluminum tri isopropoxide at temperatures between 350 and 500 C. The films were annealed in oxygen to test suitability towards shrinkage and were characterized as to porosity, the presence of OH absorption bands in the infrared transmittance spectra and breakdown voltage. Keywords: Material index; Alumina tri-isopropoxide; Silicon.

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Document Details

Document Type
Technical Report
Publication Date
Oct 27, 1987
Accession Number
ADA188366

Entities

People

  • J. Fournier
  • M. Sosnowski
  • R. Brusasco
  • Robert N. Kershaw
  • W. Desisto

Organizations

  • Brown University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption
  • Annealing
  • Chemical Synthesis
  • Chemical Vapor Deposition
  • Chemistry
  • Decomposition
  • Engineering
  • Flow
  • Materials
  • Measurement
  • Military Research
  • Oxygen
  • Refractive Index
  • Spectra
  • Thin Films
  • United States
  • Vapor Deposition

Fields of Study

  • Materials science

Readers

  • Electrochemical Engineering/ Fuel Cell Technologies
  • Organic Chemistry
  • Spectroscopy.