Silicon Containing Photoresists.

Abstract

The problems created by the generation of small features over topography has focussed attention on multilayer techniques in spite of the added processing complexities. Particularly attractive in this regard are those processes employing oxygen reactive ion etching (02-RIE) for image transfer because of the intrinsically anisotropic nature of the transfer process. This technique requires polymeric materials which are stable to 02-RIE conditions. This requirement has stimulated the development of organometallic resists particularly those containing silicon which produce etch resistant refractory oxides in the oxygen plasma environment. Recent advances in the development of silicon containing resists for multilayer applications are reviewed.

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Document Details

Document Type
Technical Report
Publication Date
Nov 13, 1987
Accession Number
ADA188666

Entities

People

  • R. D. Miller

Organizations

  • International Business Machines Corporation (Armonk, NY)

Tags

DTIC Thesaurus Topics

  • Absorption
  • Additives (Chemicals)
  • Chemical Reactions
  • Chemical Synthesis
  • Chemistry
  • Copolymers
  • Etching
  • Glass Transition Temperature
  • High Resolution
  • Manufacturing
  • Materials
  • Military Research
  • Molecular Weight
  • Polymers
  • Quantum Yields
  • Radiation
  • Reactive Ion Etching

Fields of Study

  • Materials science

Readers

  • Combustion science or combustion engineering.
  • Nanofabrication and Microfabrication.
  • Systems Analysis and Design