Focused Ion Beam Fabrication of Graded Channel FET's in GaAs and Si.

Abstract

The focused ion beam is a unique semiconductor fabrication tool with many applications. Of these, markless/resistless implantation is perhaps the one with the greatest potential impact. It permits implant dose to be varied from point to point on a wafer. Thus devices can be fabricated side by side with different doping densities, and the doping density can be varied from point to point within a device. Thus lateral gradients of doping are possible. The aim of this contract is to produce field effect transistors in GaAs and Si with graded implants from source to drain. To achieve this, alignment procedures have to de developed to permit the focused ion beam implant to be positioned precisely relative to features fabricated by conventional means. In addition, models of the behavior of graded devices have to be developed.

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Document Details

Document Type
Technical Report
Publication Date
Jun 30, 1987
Accession Number
ADA189166

Entities

People

  • John Melngailis

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Contracts
  • Electronics
  • Fabrication
  • Field Effect Transistors
  • Frequency
  • Fresnel Zones
  • Implantation
  • Ion Beams
  • Ion Sources
  • Ions
  • Micro-Machines
  • Military Research
  • Program Management
  • Semiconductor Manufacturing
  • Semiconductors
  • Technical Information Centers
  • Transistors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics