Development of Si/SiGe Heterostructures

Abstract

With the recent advances in Si molecular beam epitaxy (MBE), a heterojunction-based device technology for Si may soon be at hand. Strained- layer Si(1-x)Ge(x) epitaxial alloy films and coherently strained Si(1-x)Ge(x)/Si multilayer structures have been grown very successfully by MBE. Si(1-x)Ge(x) systems are of considerable interest because they promise to extend the capabilities of heterojunction-based devices to the already well established realm of Si technology. The major impact of heterojunction technology applied to Si electronic devices is expected to twofold: in the performance improvement of certain conventional Si devices such as the n-p-n bipolar transistor, and in the development within Si technology of novel device structures such as the High Electron-Mobility Transistor (HEMT).

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1988
Accession Number
ADA189527

Entities

People

  • O. J. Marsh
  • R. J. Hauenstein

Organizations

  • HRL Laboratories

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Band Structures
  • Conduction Bands
  • Diffraction
  • Electron Microscopy
  • Electron Mobility
  • Electrons
  • Energy Bands
  • Fabrication
  • Heterojunctions
  • High Electron Mobility Transistors
  • Materials
  • Physical Properties
  • Scattering
  • Spectra
  • Spectroscopy
  • Two Dimensional
  • X Rays

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics