Fundamental Studies and Device Development in Beta Silicon Carbide.

Abstract

The research of this reporting period has involved (1) the chemical vapor deposition (CVD) of Beta-silicon carbide on off-axis silicon (100), (2) the growth of Beta- and alpha-SiC on monocrystalline alpha-SiC substrates, (3) high temperature ion implantation, and damage production studies, (4) the continued development of contacts for n- and p-type SiC, (5) reactive ion and plasma etching, and (6) the fabrication and evaluation of MESFETs and MOSFETs in Bet-SiC. Keywords: Doping; Aluminum nitride; Electron microscopy; Secondary ion mass spectroscopy; Rutherford back-scattering.

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Document Details

Document Type
Technical Report
Publication Date
Aug 31, 1987
Accession Number
ADA189540

Entities

People

  • Calvin H. Carter Jr.
  • Jeffrey T Glass
  • Robert F Davis

Organizations

  • North Carolina State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Ceramic Materials
  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Crystal Lattices
  • Crystal Structure
  • Crystals
  • Electronics Laboratories
  • Field Effect Transistors
  • Mass Spectrometry
  • Materials
  • Materials Engineering
  • Materials Science
  • P-N Junction Diodes
  • Power Electronics
  • Semiconductors
  • Silicon Carbide
  • Spectra

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene